new product vs-eth1506s-m3, VS-ETH1506-1-M3 www.vishay.com vishay semiconductors revision: 28-sep-12 1 document number: 93573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 hyperfast rectifier, 15 a fred pt ? features ? hyperfast recovery time ? low forward voltage drop ? 175 c operating junction temperature ? low leakage current ? designed and qualified according to jedec-jesd47 ? material categorization: ? for definitions of compliance please see www.vishay.com/doc?99912 description/applications hyperfast recovery rectifiers designed with optimized performance of forward voltag e drop, hyperfast recovery time, and soft recovery. the planar structure and the pl atinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in pfc boost stage in the ac/dc section of smps, in verters or as freewheeling diodes. the extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switch ing element and snubbers. ? ? product summary package to-263ab (d 2 pak), to-262aa i f(av) 15 a v r 600 v v f at i f 2.45 v t rr (typ.) 21 ns t j max. 175 c diode variation single die v s -eth1506 s -m 3 v s -eth1506-1-m 3 to-262 d 2 pa k n/c anode 1 3 2 anode 1 3 ba s e cathode 2 n/c absolute maximum ratings parameter symbol test conditions max. units repetitive peak reverse voltage v rrm 600 v average rectified forward current i f(av) t c = 139 c 15 a non-repetitive peak surge current i fsm t c = 25 c 160 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditio ns min. typ. max. units breakdown voltage, ? blocking voltage v br , v r i r = 100 a 600 - - v forward voltage v f i f = 15a - 1.8 2.45 i f = 15 a, t j = 150 c - 1.25 1.6 reverse leakage current i r v r = v r rated - 0.01 15 a t j = 150 c, v r = v r rated - 20 200 junction capacitance c t v r = 600 v - 12 - pf series inductance l s measured lead to lead 5 mm from package body - 8.0 - nh
new product vs-eth1506s-m3, VS-ETH1506-1-M3 www.vishay.com vishay semiconductors revision: 28-sep-12 2 document number: 93573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition s min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 21 26 ns i f = 15 a, di f /dt = 100 a/s, v r = 30 v - 25 36 t j = 25 c i f = 15 a ? di f /dt = 200 a/s ? v r = 390 v -29- t j = 125 c - 65 - peak recovery current i rrm t j = 25 c - 3.9 - a t j = 125 c - 7.0 - reverse recovery charge q rr t j = 25 c - 60 - nc t j = 125 c - 240 - reverse recovery time t rr t j = 125 c i f = 15 a di f /dt = 800 a/s v r = 390 v -42-ns peak recovery current i rrm -21- a reverse recovery charge q rr - 480 - nc thermal - mechanical specifications parameter symbol test condit ions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, ? junction to case r thjc -1.31.51c/w thermal resistance, ? junction to ambient r thja typical socket mount - - 70 thermal resistance, ? case to heatsink r thcs mounting surface, flat, smooth and greased -0.5- weight -2.0- g -0.07- oz. mounting torque 6 (5) - 12 (10) kgf cm (lbf in) marking device case style d 2 pak modified eth1506s case style to-262 eth1506-1
new product vs-eth1506s-m3, VS-ETH1506-1-M3 www.vishay.com vishay semiconductors revision: 28-sep-12 3 document number: 93573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junc tion capacitance vs. reverse voltage fig. 4 - max. thermal impedance z thjc characteristics forward voltage drop - v fm (v) in s tantaneou s forward current - i f (a) 0.5 1.0 1.5 2.0 2.5 3.0 t j = 25 c t j = 150 c t j = 175 c 100 10 1 150c 175c 25c 50c 75c 125c 100c 0 100 200 300 400 500 600 0.0001 0.001 0.01 0.1 1 10 100 1000 rever s e current - i r (a) rever s e voltage - v r (v) 0 100 200 300 400 500 600 1 10 100 1000 rever s e voltage - v r (v) junction capacitance - c t (pf) 0.01 0.1 1 10 single pulse (thermal resistance) d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 0.01 t, rectangular pul s e duration ( s ) thermal impedance z thjc (c/w) 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00
new product vs-eth1506s-m3, VS-ETH1506-1-M3 www.vishay.com vishay semiconductors revision: 28-sep-12 4 document number: 93573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt 0 2 4 6 8 10 12 14 16 18 20 22 120 130 140 150 160 170 180 dc average forward current - i f(av) (a) allowable ca s e temperature (c) 0 5 10 15 20 25 0 5 10 15 20 25 30 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.2 d = 0.5 dc rms limit average forward current - i f(av) (a) average power lo ss (w) t rr (n s ) i f = 15 a, 125 c i f = 15 a, 25 c typical value 10 20 30 40 50 60 70 80 90 100 100 1000 di f /dt (a/ s ) di f /dt (a/ s ) i f = 15 a, 125 c i f = 15 a, 25 c typical value q rr ( nc ) 100 1000 0 100 200 300 400 500 600
new product vs-eth1506s-m3, VS-ETH1506-1-M3 www.vishay.com vishay semiconductors revision: 28-sep-12 5 document number: 93573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 10 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve defined by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
new product vs-eth1506s-m3, VS-ETH1506-1-M3 www.vishay.com vishay semiconductors revision: 28-sep-12 6 document number: 93573 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description vs-eth1506s-m3 50 1000 antistatic plastic tube VS-ETH1506-1-M3 50 1000 antistatic plastic tube vs-eth1506strr-m3 800 800 13" diameter reel vs-eth1506strl-m3 800 800 13" diameter reel links to related documents dimensions to-263ab (d 2 pak) www.vishay.com/doc?95046 to-262aa www.vishay.com/doc?95419 part marking information to-263ab (d 2 pak) www.vishay.com/doc?95444 to-262aa www.vishay.com/doc?95443 packaging information to-263ab (d 2 pak) www.vishay.com/doc?95032 2 - circuit configuration e = single diode 1 - vishay semiconductors product 3 - t = to-220 4 - h = hyperfast recovery time 5 - current code (15 = 15 a) 6 - voltage code (06 = 600 v) 7 - ? s = d 2 pak - ? -1 = to-262 device code 5 1 3 2 4 6 vs- e t h 15 06 s trl -m3 7 8 9 9 - -m3 = halogen-free, rohs compliant, and terminations lead (pb)-free 8 - ? none = tube (50 pieces) - ? trl = tape and reel (left oriented, for d 2 pak package) - ? trr = tape and reel (right oriented, for d 2 pak package)
document number: 95046 for technical questions within your region, please contact one of the following: www.vishay.com revision: 31-mar-11 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 d 2 pak outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranc ing per asme y14.5 m-1994 (2) dimension d and e do not include mold flash. mold flash sh all not exceed 0.127 mm (0.005") per side. these dimens ions are measu red at the outmost extremes of the plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) datum a and b to be determined at datum plane h (6) controlling dimension: inch (7) outline conforms to jedec outline to-263ab symbol millimeters inches notes symbol millimeters inches notes min. max. min. max. min. max. min. max. a 4.06 4.83 0.160 0.190 d1 6.86 8.00 0.270 0.315 3 a1 0.00 0.254 0.000 0.010 e 9.65 10.67 0.380 0.420 2, 3 b 0.51 0.99 0.020 0.039 e1 7.90 8.80 0.311 0.346 3 b1 0.51 0.89 0.020 0.035 4 e 2.54 bsc 0.100 bsc b2 1.14 1.78 0.045 0.070 h 14.61 15.88 0.575 0.625 b3 1.14 1.73 0.045 0.068 4 l 1.78 2.79 0.070 0.110 c 0.38 0.74 0.015 0.029 l1 - 1.65 - 0.066 3 c1 0.38 0.58 0.015 0.023 4 l2 1.27 1.78 0.050 0.070 c2 1.14 1.65 0.045 0.065 l3 0.25 bsc 0.010 bsc d 8.51 9.65 0.335 0.380 2 l4 4.78 5.28 0.188 0.208 c b detail a c2 a a a 0.004 b m a lead tip (3) (3) view a - a (e) (d1) e1 b h a1 detail ?a? rotated 90 cw scale: 8 :1 l gauge plane 0 to 8 l3 l4 seating plane section b - b and c - c scale: none (4) (4) ( b , b 2) b 1, b 3 (c) c1 base metal plating conforms to jedec outline d 2 pak (smd-220) 13 2 d c a l2 e (2)(3) (2) 4 h bb 2 x b 2 x b 2 l1 0.010 a b mm (3) e 2 x pad layout min. 11.00 (0.43) min. 9.65 (0.3 8 ) min. 3. 8 1 (0.15) min. 2.32 (0.0 8 ) 17.90 (0.70) 15.00 (0.625) 2.64 (0.103) 2.41 (0.096) lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
document number: 95419 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 04-oct-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 to-262 outline dimensions vishay semiconductors dimensions in millimeters and inches notes (1) dimensioning and toleranci ng as per asme y14.5m-1994 (2) dimension d and e do not include mold flash. mold flash shall not exceed 0.127 mm (0.005") pe r side. these di mensions are measured at the outmost e xtremes of th e plastic body (3) thermal pad contour optional with in dimension e, l1, d1 and e1 (4) dimension b1 and c1 a pply to base metal only (5) controlling dime nsion: inches (6) outline conform to jedec to- 262 except a1 (maximum), b (minimum) and d1 (minimum) where dimensions derived the actual package outline symbol millimeters inches notes min. max. min. max. a 4.06 4.83 0.160 0.190 a1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 4 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 4 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 4 c2 1.14 1.65 0.045 0.065 d 8.51 9.65 0.335 0.380 2 d1 6.86 8.00 0.270 0.315 3 e 9.65 10.67 0.380 0.420 2, 3 e1 7.90 8.80 0.311 0.346 3 e 2.54 bsc 0.100 bsc l 13.46 14.10 0.530 0.555 l1 - 1.65 - 0.065 3 l2 3.56 3.71 0.140 0.146 (4) (4) base metal plating b1, b3 (b, b2) c1 c section b - b and c - c scale: none section a - a (3) e1 (3) d1 e b a a a c2 c a1 seating plane lead tip (3) (2) (3) (2) a e (datum a) l1 l2 b b c c 3 2 1 l d 2 x e 3 x b2 3 x b 0.010 a b mm modified jedec outline to-262 lead assignments diodes 1. - anode (two die)/open (one die) 2., 4. - cathode 3. - anode
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